sep. 2001 preliminary notice: this is not a final specification. some parametric limits are subject to change. pin configuration mitsubishi semiconductor m63834fp/kp 8-unit 500ma darlington transistor-array description the m63834fp/kp 8-channel sinkdriver, consists of 8 pnp and 16 npn transistors connected to from eight high current gain driver pairs. features high breakdown voltage (bv ceo 50v) high-current driving (i c(max) = 500ma) 3v micro computer compatible input l active level input with input diode wide operating temperature range (ta = ?0 to +85 c) application output for 3 voltage microcomputer series and interface with high voltage system. relay and small printer driver, led, or incandescent display digit driver. function the m63834gp/kp is transistor-array of high active level eight units type which can do direct drive of 3 voltage micro- computer series. a resistor of 3.5k ? is connected between the input and the base of pnp transistors. the input diode is intended to prevent the flow of current from the input to the vcc. without this diode, the current flows from h?input to the vcc and the l?input circuit is activated, in such a case where one of the inputs of the 8 circuit is h and the other are l to save power consumption. the diode is inserted to prevent such mis-operation. the outputs are capable of driv- ing 500ma and are rated for operation with output voltage up to 50v. supply voltage collector-emitter voltage collector current input voltage power dissipation operating temperature storage temperature v v ma v w c c 7 ?.5 ~ +50 500 ?.5 ~ v cc 1.10(fp)/0.68(kp) ?0 ~ +85 ?5 ~ +125 ratings symbol parameter conditions unit absolute maximum ratings (unless otherwise noted, ta = ?0 ~ +85 c) output, h current per circuit output, l ta = 2 5 c, when mounted on board v cc v ceo i c v i p d t opr t stg circuit diagram input 3.5k 7.2k 3k 1.05k 20k v cc gnd output unit : ? the eight circuits share the vcc and gnd the diode, indicated with the dotted line, is parasitic, and cannot be used. 1 2 3 4 5 6 7 8 9 10 20 19 18 17 16 15 14 13 12 11 nc in1 in2 in3 in4 in5 in6 in7 in8 gnd nc v cc input output o1 o2 o3 o4 o5 o6 o7 o8 nc : no connection package type 20p2n-a(fp) 20p2e-a(kp)
sep. 2001 preliminary notice: this is not a final specification. some parametric limits are subject to change. mitsubishi semiconductor m63834fp/kp 8-unit 500ma darlington transistor-array recommended operating conditions (unless otherwise noted, ta = 40 ~ +85 c) v parameter 2.7 limits min typ max symbol unit v cc supply voltage h input voltage l input voltage collector current (current per 1 circuit when 8 circuits are coming on simultaneously) i c 0 0 v cc -0.5 0 3.0 3.6 400 200 v cc v cc -2.2 ma v v v ih v il 1.15 0.93 220 2.6 10000 50 2000 v (br) ceo i i i cc h fe v v a ma 2.4 1.6 600 4.0 symbol unit parameter test conditions limits min typ max collector-emitter breakdown voltage input current supply current (an only input) dc amplification factor i ceo = 100 a v cc = 2.7v, v i = 0.5v, i c = 400ma v cc = 2.7v, v i = 0.5v, i c = 200ma v i = v cc -2.2v v cc = 3.6v, v i = 0.5v v cc = 2.7v, v ce = 2v, i c = 0.35a, ta = 25 c v ce(sat) collector-emitter saturation voltage electrical characteristics (unless otherwise noted, ta = 40 ~ +85 c) ? : typical values are at ta = 25 c ns ns 120 4500 symbol unit parameter test conditions limits min typ max turn-on time turn-off time t on t off c l = 15pf (note 1) switching characteristics (unless otherwise noted, ta = 25 c) timing diagram note 1 test circuit input 50% 50% 50% 50% output ton toff pg v cc v o r l c l 50 ? input output (1)pulse generator (pg) characteristics : prr=1khz, tw = 10 s, tr = 6ns, tf = 6ns, zo = 50 ? v i = 0.5 ~ 2.7v (2)input-output conditions : r l = 30 ? , vo = 10v, vcc = 2.7v (3)electrostatic capacity c l includes floating capacitance at connections and input capacitance at probes measured device duty cycle fp : no more than 4% kp : no more than 2% duty cycle fp : no more than 15% kp : no more than 6% ?
sep. 2001 preliminary notice: this is not a final specification. some parametric limits are subject to change. mitsubishi semiconductor m63834fp/kp 8-unit 500ma darlington transistor-array typical characteristics m63834kp m63834fp 0.572 0.354 thermal derating factor characteristics power dissipation pd(max) (w) 0 25 50 75 85 100 ambient temperature ta ( c) 0 1.0 0.5 1.5 2.0 0.68 1.10 output saturation voltage collector current characteristics 400 300 200 100 0 0 0.5 1.0 1.5 2.0 500 collector current ic (ma) output saturation voltage v ce(sat) (v) vcc=2.7v v i =0.5v ta=25 c ta=85 c ta = 20 c duty cycle-collector characteristics (m63834fp) 200 100 0 400 300 500 0 20 40 60 80 100 duty cycle (%) collector current ic (ma) the collector current values represent the current per circuit. repeated frequency 10hz the value the circle represents the value of the simultaneously-operated circuit. vcc = 3v ta = 25 c 1 2 3 4 6 7 5 8 duty cycle-collector characteristics (m63834fp) 200 100 0 400 300 500 0 20 40 60 80 100 duty cycle (%) collector current ic (ma) the collector current values represent the current per circuit. repeated frequency 10hz the value the circle represents the value of the simultaneously-operated circuit. vcc = 3v ta = 85 c 1 2 3 4 6 7 5 8 duty cycle-collector characteristics (m63834kp) 0 0 20 40 60 80 100 duty cycle (%) 200 100 400 300 500 collector current ic (ma) the collector current values represent the current per circuit. repeated frequency 10hz the value the circle represents the value of the simultaneously-operated circuit. vcc = 3v ta = 25 c 1 2 3 4 6 7 5 8 duty cycle-collector characteristics (m63834kp) 0 0 20 40 60 80 100 duty cycle (%) 200 100 400 300 500 collector current ic (ma) 1 2 3 4 6 7 5 8 the collector current values represent the current per circuit. repeated frequency 10hz the value the circle represents the value of the simultaneously-operated circuit. vcc = 3v ta = 85 c
sep. 2001 preliminary notice: this is not a final specification. some parametric limits are subject to change. mitsubishi semiconductor m63834fp/kp 8-unit 500ma darlington transistor-array dc amplification factor collector current characteristics collector current i c (ma) dc amplification factor h fe 10 2 10 3 3 2 5 7 10 4 3 2 5 7 10 5 3 2 5 7 10 2 3 257 10 3 3 257 10 1 v ce =2v ta=85 c ta=25 c ta = 40 c collector current i c (ma) 0 0.4 0.8 1.2 2.0 1.6 input voltage vcc-v i (v) output current characteristics 0 200 100 300 400 500 v ce =2v ta=85 c ta=25 c ta = 40 c v cc =3v ta=85 c ta=25 c ta = 40 c input characteristics input current i i (ma) 0123 input voltage vcc-v i (v) 0 0.3 0.2 0.1 0.4 0.5 0.6 driver supply characteristics supply current icc (ma) 0246810 supply voltage vcc (v) 0 8.0 4.0 12.0 16.0 20.0 ta=25 c ta=85 c ta = 40 c v i =0.5v
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